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PD-97270 RevA
Integrated Power Hybrid IC for Low Voltage Motor Applications
Description
IRAM136-3023B Series 30A, 150V
with Internal Shunt Resistor
International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light industrial applications. IR's technology offers an extremely compact, high performance AC motor-driver in a single isolated package to simplify design. This advanced HIC is a combination of IR's low RDS(on) Advance Planar MOSFET Super Rugged technology and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced package. A built-in temperature monitor and over-current and over-temperature protections and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a new developed single in line package (SiP3) with heat spreader for the power die along with full transfer mold structure minimizes PCB space and resolves isolation problems to heatsink.
Features
* * * * * * * * * * * Integrated Gate Drivers Temperature Monitor and Protection Overcurrent shutdown Low RDS(on) Advance Planar Super Rugged Technology Undervoltage lockout for all channels Matched propagation delay for all channels 5V Schmitt-triggered input logic Cross-conduction prevention logic Lower di/dt gate driver for better noise immunity Motor Power up to 4.0kW / 48~100 Vdc Fully Isolated Package, Isolation 2000VRMS min
Absolute Maximum Ratings
Parameter VBR(DSS) V+ IO @ TC=25C IO @ TC=100C IO FPWM PD VISO TJ (MOSFET & IC) TC TSTG Description MOSFET Blocking Voltage Positive Bus Input Voltage RMS Phase Current (Note 1) RMS Phase Current (Note 1) Pulsed RMS Phase Current (Note 1 and 2) PWM Carrier Frequency Power Dissipation per MOSFET @ TC =25C Isolation Voltage (1min) Maximum Operating Junction Temperature Operating Case Temperature Range Storage Temperature Range Value 150 100 30 15 56 20 89 2000 +150 -20 to +100 -40 to +125 C kHz W VRMS A Units V
T Mounting Torque (M4 screw) 0.7 to 1.17 Nm Note 1: Sinusoidal modulation at V+=100V, TJ=150C, FPWM=20kHz, modulation depth=0.8, pf=0.6, see Figure 3 Note 2: tP<100ms; TC=25C; FPWM=20kHz, limited by IBUS-TRIP, see Table "Inverter Section Electrical Characteristics"
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IRAM136-3023B
Internal Electrical Schematic - IRAM136-3023B
V+ (10)
Q1
Q2
Q3
Q4
Q5
Q6
R10A,B,C,D,E,F V- (12)
R1
R2
R3
VB1 (1) U, VS1 (2) VB2 (4) V, VS2 (5) VB3 (7) W, VS3 (8)
C1 C2 C3 D15 D14 D13
23 VS1
22 21 20 19 18 17 VB2 HO2 VS2 VB3 HO3 VS3
LO1 16
R15 HIN1 (13) HIN2 (14) HIN3 (15) LIN1 (16) LIN2 (17) LIN3 (18) F/TMON(19) ITRIP (20) VCC(21) C4 VSS (22)
THERMISTOR
24 HO1 25 VB1 1 VCC 2 HIN1 3 HIN2 4 HIN3 5 LIN1 LIN2 LIN3 F ITRIP EN RCIN VSS COM 6 7 8 9 10 11 12 13 LO2 15
R4 R5
LO3 14
IC1
R6
R9
POSISTOR
R8 Q7 R14 C5 C6
R11 C7 R7
R12 R13
2
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IRAM136-3023B
Absolute Maximum Ratings (Continued)
Symbol IBDF PBR Peak VS1,2,3 VB1,2,3 VCC Parameter Bootstrap Diode Peak Forward Current Bootstrap Resistor Peak Power (Single Pulse) High side floating supply offset voltage High side floating supply voltage Low Side and logic fixed supply voltage Input voltage LIN, HIN, ITrip Min ----VB1,2,3 - 25 -0.3 -0.3 Max 4.5 25.0 VB1,2,3 +0.3 150 20 Lower of (VSS+15V) or VCC+0.3V Units Conditions A W V V V tP= 10ms, TJ = 150C, TC=100C tP=100s, TC =100C
VIN
-0.3
V
Inverter Section Electrical Characteristics @TJ= 25C
Symbol V(BR)DSS V(BR)DSS / T RDS(ON) Parameter Drain-to-Source Breakdown Voltage Temperature Coeff. Of Breakdown Voltage Drain-to-Source On Resistance Min 150 ------Zero Gate Voltage Drain Current Body Diode Forward Voltage Drop Bootstrap Diode Forward Voltage Drop Bootstrap Resistor Value Bootstrap Resistor Tolerance Current Protection Threshold (positive going) ---------------56 Typ --0.16 38 65 3 8 1.2 1.0 ---22 ----Max ----80 122 80 --1.9 1.8 1.25 1.10 --5 68 % A V V A Units Conditions V V/C m VIN=5V, ID=250A VIN=5V, ID=1.0mA (25C - 150C) ID=15A, VCC=15V ID=15A, VCC=15V, TJ=125C VIN=5V, V+=150V VIN=5V, V+=150V, TJ=125C ID=15A ID=15A, TJ=125C IF=1A IF=1A, TJ=125C TJ=25C TJ=25C See Figure 2
IDSS
VSD
VBDFM RBR RBR/RBR IBUS_TRIP
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IRAM136-3023B
Inverter Section Switching Characteristics @ TJ= 25C
Symbol EON EOFF ETOT EREC tRR EON EOFF ETOT EREC tRR QG EAS IAR EAR Parameter Turn-On Switching Loss
1/ 1/
Min -----------------------------
Typ 395 135 530 210 240 360 115 475 230 270 60 -------
Max 1100 250 1350 1000 --970 210 1180 1000 --89 470 36 32
Units Conditions ID=15A, V+=100V VCC=15V, L=2mH Energy losses include "tail" and diode reverse recovery See CT1 ID=15A, V+=100V VCC=15V, L=2mH, TJ=125C Energy losses include "tail" and diode reverse recovery See CT1 ID=36A, V =75V, VGS=10V Note 3, 4 Repetitive rating; pulse width limited by max. junction temperature. (Note 4)
+
Turn-Off Switching Loss Total Switching Loss
1/
J
Diode Reverse Recovery energy1/ Diode Reverse Recovery time Turn-on Swtiching Loss
1/ 1/ 1/
ns
Turn-off Switching Loss Total Switching Loss
1/
J
Diode Reverse Recovery energy1/ Diode Reverse Recovery time Turn-On FET Gate Charge
1/ 1/
ns nC mJ A mJ
Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Note 3: Starting TJ = 25C, L = 0.72mH, RG = 25 , IAS = 36A Note 4: This is only applied to TO-220AB package
1/
Based on Characterization Data only. Not subject to production test.
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. All voltages are absolute referenced to COM/ITRIP. The VS offset is tested with all supplies biased at 15V differential (Note 5). Symbol VB1,2,3 VS1,2,3 VCC VIN Definition High side floating supply voltage High side floating supply offset voltage Low side and logic fixed supply voltage Logic input voltage LIN, HIN Min VS+10 Note 6 12 VSS Max VS+20 150 20 VSS+5 V V Units V
Note 5: For more details, see IR2136 data sheet Note 6: Logic operational for Vs from COM-5V to COM+150V. Logic state held for Vs from COM-5V to COM-VBS. (please refer to DT97-3 for more details)
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IRAM136-3023B
Static Electrical Characteristics Driver Function @ TJ= 25C
VBIAS (VCC, VBS1,2,3)=15V, unless otherwise specified. The VIN and IIN parameters are referenced to VSS and are applicable to all six channels (Static Electrical Characteristics are Based on Driver IC Data Sheet, Note 5). Symbol VIH VIL VCCUV+, VBSUV+ VCCUV-, VBSUVVCCUVH, VBSUVH VIN,Clamp IQBS IQCC ILK IIN+ IINITRIP+ ITRIPV(ITRIP) V(ITRIP,HYS) Definition Logic "0" input voltage Logic "1" input voltage VCC and VBS supply undervoltage positive going threshold VCC and VBS supply undervoltage negative going threshold VCC and VBS supply undervoltage lock-out hysteresis Input Clamp Voltage (HIN, LIN, T/ITRIP) IIN=10A Quiescent VBS supply current VIN=0V Quiescent VCC supply current VIN=0V Offset Supply Leakage Current Input bias current VIN=5V Input bias current VIN=0V ITRIP bias current VITRIP=5V ITRIP bias current VITRIP=0V ITRIP threshold Voltage ITRIP Input Hysteresis Min 3.0 --8.0 7.4 0.3 4.9 --------------440 --Typ ----8.9 8.2 0.7 5.2 ------200 100 30 0 490 70 Max --0.8 9.8 9.0 --5.5 165 3.35 60 300 220 100 1 540 --Units V V V V V V A mA A A A A A mV mV
Dynamic Electrical Characteristics @ TJ= 25C
Symbol TON TOFF TFLIN TBLT-Trip DT MT TITrip TFLT-CLR
2/ 3/ 4/
Parameter Input to Output propagation turnon delay time (see fig.11)2/ Input to Output propagation turnoff delay time (see fig. 11)2/ Input Filter time (HIN, LIN)3/ ITRIP Blancking Time
3/ 3/
Min ----100 100 220 ---------
Typ 0.83 1.08 200 150 290 40 3.2 7.7 6.7
Max --------360 75 -------
Units Conditions s s ns ns ns ns s ms VCC=VBS= 15V, ID=30A, V+=100V VIN=0 & VIN=5V VIN=0 & VIN=5V VBS=VCC=15V VCC= VBS= 15V, external dead time> 400ns VCC=VBS= 15V, ID=30A, V+=100V TC = 25C TC = 100C
Dead Time (VBS=VDD=15V)
Matching Propagation Delay Time (On & Off)3/ ITrip to six switch to turn-off propagation delay (see fig. 2)4/ Post ITrip to six switch to turn-off clear time (see fig. 2)
4/
Based on Characterization Data only. Not subject to production test. Based on Driver IC Data Sheet. Verified by Design. Not subject to production test.
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IRAM136-3023B
Thermal and Mechanical Characteristics
Symbol Rth(J-C) Rth(C-S) CD
5/
Parameter Thermal resistance, FET Thermal resistance, C-S Creepage Distance
5/
Min ----3.5
Typ 1.2 0.1 ---
Max 1.4 -----
5/
Units Conditions Flat, greased surface. Heatsink C/W compound thermal conductivity 1W/mK mm See outline Drawings
Based on Characterization Data only. Not subject to production test.
Internal Current Sensing Resistor - Shunt Characteristics
Symbol RShunt TCoeff PShunt TRange Parameter Resistance Temperature Coefficient Power Dissipation Temperature Range Min 8.1 0 ---20 Typ 8.3 ------Max 8.5 200 4.5 125 Units Conditions m ppm/C TC = 25C
W
C
-40C< TC <100C
Internal NTC - Thermistor Characteristics
Parameter R25 R125 B Definition Resistance Resistance
6/ 6/
Min 97 2.25 4165 -20 ---
Typ 100 2.52 4250 --1
Max 103 2.80 4335 125 ---
Units Conditions k k k C mW/C TC = 25C TC = 25C TC = 125C R2 = R1e [B(1/T2 - 1/T1)]
B-constant (25-50C)
Temperature Range Typ. Dissipation constant
6/
Verified by Design. Not subject to production test.
Input-Output Logic Level Table
V+
Hin1,2,3 (13,14,15)
IC Driver
Ho U,V,W (2,5,8) Lo
ITRIP 0 0 0 1
HIN1,2,3 0 1 1 X
LIN1,2,3 1 0 1 X
U,V,W V+ 0 X X
Lin1,2,3 (16,17,18)
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IRAM136-3023B
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
50%
ITRIP
U,V,W
50%
50%
TITRIP
Figure 2. ITRIP Timing Waveform
TFLT-CLR
Note 7: The shaded area indicates that both high-side and low-side switches are off and therefore the halfbridge output voltage would be determined by the direction of current flow in the load.
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IRAM136-3023B
Module Pin-Out Description
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Name VB1 U, VS1 NA VB2 V,VS2 NA VB3 W,VS3 NA V
+
Description High Side Floating Supply Voltage 1 Output 1 - High Side Floating Supply Offset Voltage none High Side Floating Supply voltage 2 Output 2 - High Side Floating Supply Offset Voltage none High Side Floating Supply voltage 3 Output 3 - High Side Floating Supply Offset Voltage none Positive Bus Input Voltage none Negative Bus Input Voltage Logic Input High Side Gate Driver - Phase 1 Logic Input High Side Gate Driver - Phase 2 Logic Input High Side Gate Driver - Phase 3 Logic Input Low Side Gate Driver - Phase 1 Logic Input Low Side Gate Driver - Phase 2 Logic Input Low Side Gate Driver - Phase 3 Temperature Monitor and Fault Function Current Monitor +15V Main Supply Negative Main Supply
NA VHIN1 HIN2 HIN3 LIN1 LIN2 LIN3 Fault/TMON ISense VCC VSS
8
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IRAM136-3023B
Typical Application Connection IRAM136-3023B
1
BOOT-STRAP CAPACITORS
U
VB1
VB2
IRAM136-3023B
3-Phase AC MOTOR V+
V VB3
W V+
DC BUS CAPACITORS
VHIN1 HIN2 HIN3 LIN1 LIN2 LIN3 FLT/TMON ITRIP
Date Code Lot #
+5V
CONTROLLER 12kohm Fault & Temp Monitor IMonitor
Vcc (15 V)
+5V
VSS
22
+15V
0.1m 10m
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins will further improve performance. 2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors shown connected between these terminals should be located very close to the module pins. Additional high frequency capacitors, typically 0.1F, are strongly recommended. 3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made based on IR design tip DN 98-2a, application note AN-1044 or Figure 9. Bootstrap capacitor value must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see maximum ratings Table on page 3). 4. After approx. 8ms the FAULT is reset. (see Dynamic Characteristics Table on page 5). 5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system, overcurrent condition must be cleared before resuming operation. 6. Fault/TMON Monitor pin must be pulled-up to +5V.
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IRAM136-3023B
26 Maximum Output Phase RMS Current - A 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz TC = 80C TC = 90C TC = 100C
Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency Sinusoidal Modulation, V+=100V, TJ=150C, Modulation Depth=0.8, PF=0.6
20 Maximum Output Phase RMS Current - A 18 16 14 12 10 8 6 4 2 0 1 10 Modulation Frequency - Hz 100 FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz
Figure 4. Maximum Sinusoidal Phase Current vs. Modulation Frequency Sinusoidal Modulation, V+=100V, TJ=100C, Modulation Depth=0.8, PF=0.6
10
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IRAM136-3023B
240 220 200 Total Power Loss- W 180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 PWM Sw itching Frequency - kHz IOUT = 18A IOUT = 15A IOUT = 12A
Figure 5. Total Power Losses vs. PWM Switching Frequency Sinusoidal Modulation, V+=100V, TJ=150C, Modulation Depth=0.8, PF=0.6
350 300 Total Power Loss - W 250 200 150 100 50 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Phase Current - ARMS FPWM = 20kHz FPWM = 16kHz FPWM = 12kHz
Figure 6. Total Power Losses vs. Output Phase Current Sinusoidal Modulation, V+=100V, TJ=150C, Modulation Depth=0.8, PF=0.6
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IRAM136-3023B
150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 Max Allowable Case Temperature - C
FPWM = 12kHz FPWM = 16kHz FPWM = 20kHz
8
10
12
14
16
18
20
22
24
Output Phase Current - ARMS
Figure 7. Maximum Allowable Case Temperature vs. Output RMS Current per Phase Sinusoidal Modulation, V+=100V, TJ=150C, Modulation Depth=0.8, PF=0.6
160 MOSFET Junction Temperature - C TJ avg = 1.4026 x TT herm + 6.4583
150 140
130
120 110 102.3 65 70 75 80 85 90 95 100 105 110
100
Internal Therm istor Tem perature Equivalent Read Out - C
Figure 8. Estimated Maximum MOSFET Junction Temperature vs. Thermistor Temperature
12
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IRAM136-3023B
5.0 4.5 Thermistor Pin Read-Out Voltage - V 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
TTHERM RTHERM TTHERM RTHERM TTHERM C C C -40 4397119 25 100000 90 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 3088599 2197225 1581881 1151037 846579 628988 471632 357012 272500 209710 162651 127080 30 35 40 45 50 55 60 65 70 75 80 85 79222 63167 50677 40904 33195 27091 22224 18322 15184 12635 10566 8873 95 100 105 110 115 120 125 130 135 140 145 150 RTHERM 7481 6337 5384 4594 3934 3380 2916 2522 2190 1907 1665 1459 1282
+5V REXT VTherm RTherm
Min Avg. Max
0.0 -40 -30 -20 -10 0
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Therm istor Tem perature - C
Figure 9. Thermistor Readout vs. Temperature (12Kohm pull-up resistor, 5V) and Normal Thermistor Resistance values vs. Temperature Table.
16.0 15.0 14.0 13.0 12.0 11.0 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 0
Recommended Bootstrap Capacitor - F
15 F
RBS +15V DBS Vcc H HIN L HIN V SS COM VB CBS Ho Vs Lo RG 2 R G1
V+
10 F
HHIN L HIN
U,V,W
6.8 F 4.7 F
V SS
GND
3.3 F
5
10 PWM Frequency - kHz
15
20
Figure 10. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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IRAM136-3023B
Figure 11. Switching Parameter Definitions VDS
50% HIN /LIN
ID
ID
90% ID
VDS HIN /LIN
90% ID
50% VDS
50% HIN /LIN
HIN /LIN
50% VCE 10% ID
10% ID
tr TON Figure 11a. Input to Output propagation turn-on delay time. TOFF
tf
Figure 11b. Input to Output propagation turn-off delay time.
Figure 11c. Diode Reverse Recovery.
14
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IRAM136-3023B
Figure CT1. Switching Loss Circuit
IN IO
Figure CT2. S.C.SOA Circuit
IN IO
Figure CT3. R.B.SOA Circuit
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IRAM136-3023B
Package Outline
Missing pins: 3, 6, 9, 11
Missing Pin : 3,6,9,11 note3 note4
TENTATIVE
IRAM136-3023B
note2
P 4DB00
note5
note1: Unit Tolerance is +0.5mm, Unless Otherwise Specified. note2: Mirror Surface Mark indicates Pin1 Identification. note3: Part Number Marking. Characters Font in this drawing differs from Font shown on Module. note4: Lot Code Marking. Characters Font in this drawing differs from Font shown on Module. note5: "P" Character denotes Lead Free. Characters Font in this drawing differs from Font shown on Module.
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information 02/2008 16
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